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APT100GT120JRDL Datasheet(PDF) 7 Page - Microsemi Corporation

Part # APT100GT120JRDL
Description  Resonant Mode IGBT
PDF  9 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT100GT120JRDL Datasheet(HTML) 7 Page - Microsemi Corporation

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Typical Performance Curves
APT100GT120JRDL
STATIC ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
Symbol
Characteristic / Test Conditions
APT100GT120JRDL
Unit
I
F(AV)
Maximum Average Forward Current (T
C = 50°C, Duty Cycle = 0.5)
60
Amps
I
F(RMS)
RMS Forward Current (Square wave, 50% duty)
90
I
FSM
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3 ms)
120
Symbol
Characteristic / Test Conditions
Min
Type
Max
Unit
V
F
Forward Voltage
I
F = 60A
1.6
2.1
Volts
I
F = 120A
2.0
I
F = 60A, TJ = 125°C
1.25
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
t
rr
Reverse Recovery Time
I
F = 1A,
di
F/dt = -100A/µs,
V
R = 30V, TJ = 25°C
-
61
-
ns
t
rr
Reverse Recovery Time
I
F
= 60A, di
F
/dt = -200A/µs
V
R
= 800V, T
C
= 25°C
-
592
-
Q
rr
Reverse Recovery Charge
-
2694
-
nC
I
RRM
Maximum Reverse Recovery Current
-
9
-
Amps
t
rr
Reverse Recovery Time
I
F
= 60A, di
F
/dt = -200A/µs
V
R
= 800V, T
C
= 125°C
-
793
-ns
Q
rr
Reverse Recovery Charge
-
5744
-
nC
I
RRM
Maximum Reverse Recovery Current
-
13
-
Amps
t
rr
Reverse Recovery Time
I
F
= 60A, di
F
/dt = -1000A/µs
V
R
= 800V, T
C
= 125°C
-
286
-
ns
Q
rr
Reverse Recovery Charge
-
6182
-nC
I
RRM
Maximum Reverse Recovery Current
-
42
-
Amps
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
Note:
D = 0.9



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