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APT100GT120JRDL Datasheet(PDF) 9 Page - Microsemi Corporation |
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APT100GT120JRDL Datasheet(HTML) 9 Page - Microsemi Corporation |
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9 / 9 page ![]() APT100GT120JRDL(G) SOT-227 (ISOTOP ®) Package Outline 31.5 (1.240) 31.7 (1.248) Dimensions in Millimeters and (Inches ) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * Emitter/Anode Collector/Cathode Gate * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) * Emitter/Anode Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal. APT10035LLL 4 3 1 2 5 5 Zero 1 2 3 4 di F/dt - Rate of Diode Current Change Through Zero Crossing. I F - Forward Conduction Current I RRM - Maximum Reverse Recovery Current. trr - Reverse Recovery Time, measured from zero crossing where diode Qrr - Area Under the Curve Defined by IRRM and trr. current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 0.25 IRRM PEARSON 2878 CURRENT TRANSFORMER di F/dt Adjust 30 μH D.U.T. +18V 0V Vr trr/Qrr Waveform Figure 32, Diode Test Circuit Figure 33, Diode Reverse Recovery Waveform and Definitions Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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