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APT100GT120JRDL Datasheet(PDF) 8 Page - Microsemi Corporation

Part # APT100GT120JRDL
Description  Resonant Mode IGBT
PDF  9 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT100GT120JRDL Datasheet(HTML) 8 Page - Microsemi Corporation

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Typical Perfromance Curves
APT100GT120JRDL
0
20
40
60
80
100
0
0.5
1
1.5
2
2.5
3
0
50
100
150
200
250
300
350
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450
500
0
200
400
600
800
1000
0
10
20
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25
50
75
100
125
150
0
10
20
30
40
50
60
70
0
200
400
60
800
1000
0
0.2
0.4
0.6
0.8
1.0
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Duty cycle = 0.5
T
J = 45°C
I
RRM
Q
RR
t
RR
60A
30A
60A
30A
T
J= 55°C
T
J= 150°C
V
F, ANODE-TO-CATHODE VOLTAGE (V)
FIGURE 2, Forward Current vs. Forward Voltage
T
J= 25°C
T
J= 125°C
-di
F/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 6, Dynamic Parameters vs Junction Temperature
Case Temperature (°C)
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
0
200
400
600
800
1000
1200
1400
1
10
100
800
V
R, REVERSE VOLTAGE (V)
FIGURE 8, Junction Capacitance vs. Reverse Voltage
T
J = 125°C
V
R = 800V
T
J = 125°C
V
R = 800V
-di
F/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
-di
F/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
T
J = 125°C
V
R = 800V
30A
15A
15A
15A
60A



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