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PI2001 Datasheet(PDF) 15 Page - Vicor Corporation

Part # PI2001
Description  Universal Active ORing Controller IC
PDF  23 Pages
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Manufacturer  VICOR [Vicor Corporation]
Direct Link  http://www.vicorpower.com
Logo VICOR - Vicor Corporation

PI2001 Datasheet(HTML) 15 Page - Vicor Corporation

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Ra
TH
I
OV
V
Ra
)
(
=
Set
value based on system allowable current
Ra
Ra
I
Ra
TH
I
OV
V
Ra
)
(
=
⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
−
=
1
)
(
)
(
UV
V
OV
V
Ra
Rb
()
⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
−
+
=
1
)
(
TH
V
UV
V
Rb
Ra
Rc
Where:
)
(
TH
UV
V
: UV threshold voltage
)
(
TH
OV
V
: OV threshold voltage
V(UV)
: UV voltage
Ra
I
:
current.
Ra
Alternatively,
a
two-resistor
voltage
divider
configuration can be used and is shown in (Figure 14).
Figure 14:
Two-resistor divider configuration
The UV resistor voltage divider can be obtained from
the following equations:
RUV
TH
UV
I
UV
V
R
)
(
1
=
Set
value based on system allowable current
UV
R1
A
I
RUV
μ
100
≥
⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
−
=
1
)
(
)
(
1
2
TH
UV
UV
UV
V
UV
V
R
R
Where:
)
(
TH
UV
V
: UV threshold voltage
RUV
I
:
current
UV
R1
RUV
TH
UV
I
UV
V
R
)
(
1
=
Set
value based on system allowable current
OV
R1
A
I
RUV
μ
100
≥
⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
−
=
1
)
(
)
(
1
2
TH
OV
OV
OV
V
OV
V
R
R
Picor Corporation • picorpower.com
PI2001
Rev 1.0
Page 15 of 23
Where:
)
(
TH
OV
V
: OV threshold voltage
ROV
I
:
current
OV
R1
Typical application Example 1:
Requirement:
Redundant Bus Voltage = 3.3V
Load Current = 15A (assume through each redundant
path)
Maximum Ambient Temperature = 75°C
Auxiliary Voltage = 12V (11V to 13V)
Solution:
1. A single PI2001 with suitable external MOSFET
for each redundant 3.3V power source should be
used, configured as shown in the circuit schematic
in figure 15
2. Select a suitable N-Channel MOSFET:
Most
industry standard MOSFETs have a Vgs rating of
+/-12V or higher. Select an N-Channel MOSFET
with a low Rds(on) which is capable of supporting
the full load current with some margin, so a
MOSFET capable of at least 18A in steady state
is reasonable.
An exemplary MOSFET having
these characteristic is FDS6162N7 from Fairchild.
From FDS6162N7 datasheet:
•
N-Channel MOSFET
•
VDS= 20V
•
ID = 23A continuous drain current
•
VGS(MAX)=
± 12V
•
RθJA= 40°C/W
•
RDS(on)=2.9mΩ typical at ID=23A, VGS≥4.5V,
TJ=25°C
Reverse current threshold is:
A
m
mV
on
Rds
reverse
Vth
reverse
Is
07
.
2
9
.
2
6
)
(
.
.
−
=
Ω
−
=
=
Power dissipation:
Rds(on) is 3.5mΩ maximum at 25°C & 4.5Vgs and will
increase as the temperature increases. Add 25°C to
maximum ambient temperature to compensate for the
temperature rise due to power dissipation. At 100°C
(75°C + 25°C) Rds(on) will increase by 28%.
Ω
=
∗
Ω
=
m
m
on
Rds
48
.
4
28
.
1
5
.
3
)
(
maximum at 100°C
)
(
2
on
Rds
Is
Rth
Trise
JA
∗
∗
=
Maximum Junction temperature
Trise
T
T
A
J
+
=
max
C
m
A
W
C
C
T
J
°
=
⎟
⎠
⎞
⎜
⎝
⎛
Ω
∗
∗
°
+
°
=
115
48
.
4
)
15
(
40
75
2
max



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