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MB85R2002 Datasheet(PDF) 6 Page - fujitsu semiconductor |
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MB85R2002 Datasheet(HTML) 6 Page - fujitsu semiconductor |
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6 / 12 page ![]() MB85R2002 6 DS05-13108-4E ■ ELECTRICAL CHARACTERISTICS 1. DC CHARACTERISTICS (within recommended operating conditions) *1 : During the measurement of ICC , the Address, Data In were taken to only change once per active cycle. IOUT : output current *2 : All pins other than setting pins should be input at the CMOS level voltages such as H ≥ VCC − 0.2 V, L ≤ 0.2 V. 2. AC CHARACTERISTICS • AC TEST CONDITIONS Supply Voltage : 3.0 V to 3.6 V Operating Temperature : −40 °C to +85 °C Input Voltage Amplitude : 0.3 V to 2.7 V Input Rising Time : 5 ns Input Falling Time : 5 ns Input Evaluation Level : 2.0 V / 0.8 V Output Evaluation Level : 2.0 V / 0.8 V Output Impedance : 50 pF (1) Read Operation (within recommended operating conditions) Parameter Symbol Conditions Value Unit Min Typ Max Input Leakage Current |ILI|VIN = 0 V to VCC ⎯⎯ 10 μA Output Leakage Current |ILO|VOUT = 0 V to VCC, CE1 = VIH or OE = VIH ⎯⎯ 10 μA Supply Current ICC CE1 = 0.2 V, CE2 = VCC − 0.2 V, IOUT = 0 mA*1 ⎯ 10 15 mA Standby Current ISB CE1 ≥ VCC − 0.2 V ⎯ 10 50 μA CE2 ≤ 0.2 V*2 OE ≥ VCC − 0.2 V, WE ≥ VCC − 0.2 V*2 LB ≥ VCC − 0.2 V, UB ≥ VCC − 0.2 V*2 Output Voltage (high) VOH IOH = − 2.0 mA VCC × 0.8 ⎯⎯ V Output Voltage (low) VOL IOL = 2.0 mA ⎯⎯ 0.4 V Parameter Symbol Value Unit Min Max Read Cycle time tRC 150 ⎯ ns CE1 Active Time tCA1 120 ⎯ ns CE2 Active Time tCA2 120 ⎯ ns OE Active Time tRP 120 ⎯ ns LB, UB Active Time tBP 120 ⎯ ns Pre-charge Time tPC 20 ⎯ ns Address Setup Time tAS 5 ⎯ ns Address Hold Time tAH 50 ⎯ ns OE Setup Time tES 5 ⎯ ns LB, UB Setup Time tBS 5 ⎯ ns Output Data Hold time tOH 0 ⎯ ns Output Set Time tLZ 30 ⎯ ns CE1 Access Time tCE1 ⎯ 100 ns CE2 Access Time tCE2 ⎯ 100 ns OE Access Time tOE ⎯ 100 ns Output Floating Time tOHZ ⎯ 20 ns |
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