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MB85R2002 Datasheet(PDF) 10 Page - fujitsu semiconductor |
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MB85R2002 Datasheet(HTML) 10 Page - fujitsu semiconductor |
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10 / 12 page ![]() MB85R2002 10 DS05-13108-4E ■ POWER ON/OFF SEQUENCE (within recommended operating conditions) ■ NOTES ON USE After the IR reflow completed, it is not guaranteed to save the data written prior to the IR reflow. ■ ORDERING INFOMATION Parameter Symbol Value Unit Min Typ Max CE1 LEVEL hold time for Power OFF tpd 85 ⎯⎯ ns CE1 LEVEL hold time for Power ON tpu 85 ⎯⎯ ns Power supply rising time tr 0.05 ⎯ 200 ms Part number Package MB85R2002PFTN-GE1 48-pin plastic TSOP(1) (FPT-48P-M25) CE1 > VCC × 0.8* CE1 : Don't Care CE1 > VCC × 0.8* tpu tr tpd VCC CE2 3.0 V 1.0 V VIH (Min) VIL (Max) GND CE1 CE1 VCC CE2 3.0 V 1.0 V VIH (Min) VIL (Max) GND * : CE1 (Max) < VCC + 0.5 V Notes: • Use either of CE1 or CE2, or both for disenable control of the device. • Because turning the power on from an intermediate level may cause malfunctions, when the power is turned on, VCC is required to be started from 0 V. • If the device does not operate within the specified conditions of read cycle, write cycle, power on/off sequence, memory data can not be guaranteed. CE2 ≤ 0.2 V |
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