MAC212 Series MAC212A Series

3–84

Motorola Thyristor Device Data

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

2.1

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

Peak Blocking Current (Either Direction)

(VD = Rated VDRM, Gate Open)

TJ = 25°C

TJ = +125°C

IDRM

—

—

—

—

10

2

µA

mA

Peak On-State Voltage (Either Direction)

ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%

VTM

—

1.3

1.75

Volts

Gate Trigger Current (Continuous dc)

(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

IGT

—

—

—

—

12

12

20

35

50

50

50

75

mA

Gate Trigger Voltage (Continuous dc)

(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C)

MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

VGT

—

—

—

—

0.2

0.2

0.9

0.9

1.1

1.4

—

—

2

2

2

2.5

—

—

Volts

Holding Current (Either Direction)

(Main Terminal Voltage = 12 Vdc, Gate Open,

Initiating Current = 500 mA)

IH

—

6

50

mA

Turn-On Time

(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,

Rise Time = 0.1

µs, Pulse Width = 2 µs)

tgt

—

1.5

—

µs

Critical Rate of Rise of Commutation Voltage

(VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms,

Gate Unenergized, TC = +85°C)

dv/dt(c)

—

5

—

V/

µs

Critical Rate of Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,

TC = +85°C)

dv/dt

—

100

—

V/

µs

30

°

60

°

90

°

0

4.0

8.0

12

16

20

24

28

14

12

10

6.0

8.0

4.0

2.0

0

IT(RMS), RMS ON-STATE CURRENT (AMP)

115

FIGURE 2 — POWER DISSIPATION

75

85

95

105

0

2.0

4.0

6.0

8.0

10

12

125

14

IT(RMS), RMS ON-STATE CURRENT (AMP)

dc

180

°

90

°

α = CONDUCTION ANGLE

α

α

FIGURE 1 — CURRENT DERATING

60

°

α

α

α = CONDUCTION ANGLE

α = 30°

dc

α = 180°