MAC4DCM MAC4DCN

5

Motorola Thyristor Device Data

Figure 13. Typical Exponential Static dv/dt

versus Junction Temperature, MT2(+)

Figure 14. Typical Exponential Static dv/dt

versus Junction Temperature, MT2(–)

Figure 15. Critical Rate of Rise of

Commutating Voltage

125

100

TJ, JUNCTION TEMPERATURE (°C)

4.0 K

TJ, JUNCTION TEMPERATURE (°C)

125

100

10 K

2.0 K

0

5.0

35

0

di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

100

10

1.0

2.0 K

0

105

110

115

120

105

110

12 K

14 K

10 K

8.0 K

115

120

4.0 K

6.0 K

8.0 K

10

15

GATE OPEN

VPK = 400 V

800 V

600 V

GATE OPEN

VPK = 400 V

800 V

600 V

VPK = 400 V

100

°C

75

°C

TJ = 125°C

tw

VDRM

(di/dt)c =

6f ITM

1000

f =

1

2 tw

6.0 K

20

25

30