BQ76PL102 datasheet(6/18 Pages) TI

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bq76PL102

SLUS887A – DECEMBER 2008 – REVISED OCTOBER 2009 .......................................................................................................................................... www.ti.com

ELECTRICAL CHARACTERISTICS (continued)

TA = –40°C to 85°C (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

EXTERNAL TEMPERATURE SENSOR(S) TYPICAL CHARACTERISTICS(6)

Measurement range(7)

–40

°C

Resolution

0.2

°C

25°C

±2

°C

Accuracy(8)

0°C to 85°C

±2

°C

PowerPump ELECTRICAL CHARACTERISTICS (FOR bq76PL102)(9)

VOH

High drive, PUMP1S, PUMP2S

IOUT = 10 µA

0.9 V1

VOL

Low drive, PUMP1S, PUMP2S

IOUT = –200 µA

0.1 V1

VOH

High drive, PUMP1N, PUMP2N

IOUT = 200 µA

0.9 V1

VOL

Low drive, PUMP1N, PUMP2N

IOUT = –10 µA

0.1 V1

IOH

Source current, PUMP1S, PUMP2S

VOH = V1 – 0.8 V

250

µA

IOL

Sink current, PUMP1N, PUMP2N

VOH = V1 + 0.2 V

–250

µA

Signal rise time

CLoad = 300 pF

100

Signal FET fall time

CLoad = 300 pF

100

Frequency

204.8

kHz

PUMP1S, PUMP2S

67%

PWM duty cycle(10)

PUMP1N, PUMP2N

33%

LDO VOLTAGE CHARACTERISTICS(11)

VLDO

Single-cell operation, referenced to VSS

Load = 200

µA at 25°C, V1 = 2.8 V

2.425

2.5

2.575

VLDO

Dual-cell operation, V1 = V2 = cell voltage Load = 2 mA at 25°C

2.425

2.5

2.575

VLAN SIGNALS

(12) (13) (14)

SDI, C coupling = 1000 pf

100

Load capacitance

SDO

100

VIH

Input logic high

SDI

0.8 VLDO

VOH

Output logic high

SDO

0.9 VLDO

VIL

Input logic low

SDI

0.2 VLDO

VOL

Output logic low

SDO

0.1 VLDO

Input rise time

SDI

500

Input fall time

SDI

500

tor

Output rise time

SDO

tof

Output fall time

SDO

(6)

Typical for dual-diode (MMBD4148 or equivalent) external sensor using recommended circuit

(7)

Range of diode sensors may exceed operation limits of IC and battery cells.

(8)

Typical behavior after calibration; final result depends on specific component characteristics

(9)

All parameters tested at typical cell voltages = 3.6 V.

(10) The frequency and duty cycle of each pump gate drive signal is set by the bq78PL114. The PUMPxN signals have a positive duty cycle

and switch on the N-Channel MOSFETs. The duty cycle of the PUMPxS signals is (100 – the duty cycle of the PUMPxN signals).

(11) After calibration

(12) Values specified by design

(13) The SDI and SDO pins on the bq76PL102 are ac-coupled from the cell circuits downstream and upstream, respectively. The limits

specified here are the voltage transitions which must occur within the SDI and SDO rise- and fall-time specifications.

(14) The value specified is over the full input voltage range and the maximum load capacitance.

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