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LTC3603 Datasheet(PDF) 3 Page - Linear Technology |
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LTC3603 Datasheet(HTML) 3 Page - Linear Technology |
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3 / 22 page ![]() LTC3603 3 3603fa Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LTC3603E is guaranteed to meet performance specifications from 0°C to 85°C. Specifications over the –40°C to 85°C operating junction temperature range are assured by design, characterization and correlation with statistical process controls. The LTC3603I is guaranteed over the –40°C to 125°C operating junction temperature range. Note 3: The LTC3603 is tested in a feedback loop that adjusts VFB to achieve a specified error amplifier output voltage (ITH). SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS PVIN Operating Voltage Range 4.5 15 V VFB Regulated Feedback Voltage ITH = 0.7V (Note 3) l 0.594 0.6 0.606 V ΔVFB(LINEREG) Feedback Voltage Line Regulation VIN = 5V to 15V, ITH = 0.7V 0.005 %/V ΔVFB(LOADREG) Feedback Voltage Load Regulation ITH = 0.36V to 0.84V l 0.02 0.1 % ΔVPGOOD Power Good Range ±10 ±12 % RPGOOD Power Good Resistance 55 80 Ω IFB FB Input Bias Current 10 nA gm Transconductance Amplifier gm 1.7 mS IS Supply Current Active Mode Sleep Mode Shutdown (Note 4) 500 75 0.2 700 100 1 μA μA μA INTVCC VCC LDO Output Voltage 4.7 4.9 5.1 V tON, MIN Minimum Controllable ON-Time 95 115 ns VRUN RUN Pin ON Threshold VRUN Rising l 0.4 0.7 1 V ITRACK/SS TRACK/SS Pull-Up Current TRACK/SS = 1V 1.25 μA fOSC Oscillator Frequency RT = 105k 0.85 1 1.15 MHz fSYNC SYNC Capture Range 0.3 3 MHz RDS(ON) Top Switch On-Resistance Bottom Switch On-Resistance 85 45 m Ω m Ω ILIM Peak Current Limit 3.8 4.5 5.2 A ILSW Switch Leakage Current 0.1 1 μA VUVLO INTVCC Undervoltage Lockout INTVCC Ramping Up l 4.1 4.2 4.3 V VUVLO, HYS INTVCC Undervoltage Lockout Hysteresis 700 mV ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating junction temperature range, otherwise specifications are at TA = 25°C. VIN = 12V unless otherwise specified. Note 4: Dynamic supply current is higher due to the internal gate charge being delivered at the switching frequency. Note 5: TJ is calculated from the ambient temperature TA and the power dissipation as follows: TJ = TA + (PD)(θJAºC/W). Note 6: This IC includes overtemperature protection that is intended to protect the device during momentary overload conditions. Junction temperature will exceed 125°C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature may impair device reliability. Note 7: This limit indicates the current density limitations of the internal metallization and it is not tested in production. |
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