M
MM
MIIC
C
A
AP
P223300
▪ Tel : 82-31-250-5011
▪ All specifications may change without notice.
▪ rfsales@rfhic.com
▪ Version 6.0
Product Features
Applications
• Small size
• NO matching circuit needed
• High efficiency
• Dual supply voltage
• Higher linearity
• Higher productivity
• Lower manufacturing cost
• GaAs MMIC
• 3MHz – 2150MHz
• -63dBc CSO 135 Channels@ output Level +37dBmV
• -60dBc CTB 135 Channels@ output Level +37dBmV
• -70dBc CSO 8 Channels@ output Level +45dBmV
• -73dBc CTB 8 Channels@ output Level +45dBmV
• Satellite
• Repeater
• Base Station
• Converter
• CATV
• SMATV
Descriptions
The power amplifier is designed for base stations and repeater systems.
GaAs MMIC is used and attached on a copper carrier of 8 pin air cavity package with dual supply voltage
Operating Ranges
PARAMETER
UNIT
MIN
TYP
MAX
Device Voltage
VDC
+5
+5.3
Case Temperature
℃
-40
-
+85
Absolute Minimum and Maximum Ratings
PARAMETER
UNIT
MIN
MAX
Device Voltage
VDC
+5.5
Device Current
mA
+320
RF Input Power
dBm
+10
Storage Temperature
℃
-40
+150
Specifications
T=25℃, Vcc=5.0V, 75Ω system
Units
M inimum
Typical
Max imum
C ondition
MHz
3MHz~2.15GHz
V5
Vcc= 5V
m A
20 0
2 20
2 50
dB
1 6
3M Hz
dB
1 5
50M Hz
dB
1 4
215 0M Hz
dB
-16
dB
-16
5.5
dB m
4 3
+5 dBm /2 to ne separated by 1M Hz
dB m
2 1
At 100M Hz
dB
-11
dB
-11
dB m
3 7
+5 dBm /2 to ne separated by 1M Hz
dB m
2 1
At 800M Hz
dB
4
C SO
dB c
-63
13 5 chann els ,+ 37 dB mV/ch,Single
C TB
dB c
-60
13 5 chann els ,+ 37 dB mV/ch,Single
XM D
dB c
-55
13 5 chann els ,+ 37 dB mV/ch,Single
CSO
dBc
-70
8 channels,+45d Bm V/ch,Sin gle
CTB
dB c
-73
8 channels,+45d Bm V/ch,Sin gle
XM D
dB c
-70
8 channels,+45d Bm V/ch,Sin gle
S11-Inpu t Retu rn Los s
S22-Output R eturn Loss
OIP3
Noise Figure
Reverse ( 3 ~ 200M Hz )
Forward ( 50 ~ 870M Hz )
50 - 870M Hz
3 - 150M Hz
Noise Figure
S11-Inpu t Retu rn Los s
S22-Output R eturn Loss
OIP3
OIP1
OIP1
Parame ter
Frequency R an ge
Sup ply Vo ltage
Single Ended CATV Evaluation Circui t
Cu rrent
S21 -Gain
S21 -Gain
S21 -Gain
Package : SOIC-8
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