BCY78 datasheet(2/4 Pages) COMSET

2 / 4 page

PNP BCY78 – BCY79

COMSET SEMICONDUCTORS

2/4

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified

Symbol

Ratings

Test Condition(s)

Min

Typ

Unit

VCB =-35 V, VBE =0V

BCY79

ICES

Collector Cutoff Current

VCB =-25 V, VB =0V

BCY78

-20

VCB =-35 V

VBE =0V,Tj =150°C

BCY79

ICES

Collector Cutoff Current

VCB =-25 V

VBE =0V,Tj =150°C

BCY78

-10

µA

BCY79

IEBO

Emitter Cutoff Current

VBE =-4.0 V, IC =0

BCY78

-20

BCY79

-45

VCEO

Collector Emitter Breakdown

Voltage

IC =-2 mA, IB =0

BCY78

-32

BCY79

VEBO

Emitter Base Breakdown

Voltage

IE =-1µA, IC =0

BCY78

-5

BCY79

IC =-10 mA, IB =-0.25 mA

BCY78

-0.12

-0.25

BCY79

VCE(SAT)

Collector-Emitter saturation

Voltage

IC =-100 mA, IB =-2.5 mA

BCY78

-04

-08

BCY79

IC =-10 mA, I B=-0.25 mA

BCY78

-0.6

-0.7

-0.85

BCY79

VBE(SAT)

Base-Emitter Saturation

Voltage

IC =-100 mA, IB =-2.5 mA

BCY78

-0.7

-0.85

-1.2

BCY79

IC =-10 µA, VCE =-5 V

BCY78

-0.55

BCY79

IC =-2 mA, VCE =-5 V

BCY78

-0.6

-0.65

-0.75

BCY79

IC =-10 mA, VCE =-1 V

BCY78

-0.68

BCY79

VBE

Base-Emitter Voltage

IC =-100 mA, VCE =-1 V

BCY78

-0.75

BCY79VII

BCY79VIII

BCY79IX

BCY79X

BCY78VII

BCY78VIII

BCY78IX

BCY78X

>30

>40

>100

IC =-10 µA, VCE =-5 V

Typ.140

Typ.200

Typ.270

Typ.390

>120

>180

>250

>380

IC =-2 mA, VCE =-5 V

<220

<310

<460

<630

>80

>120

>160

>240

IC =-10 mA, VCE =-1 V

<400

<630

<1000

hFE

DC Current Gain

IC =-100 mA, VCE =-1 V

>40

>45

>60

>125

>175

>250

>350

hfe

Small-Signal

Current Gain

IC =2 mA, VC E=5 V

f = 1kHz

<250

<350

<500

<700

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