BLF645_1

© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 01 — 27 January 2010

2 of 13

NXP Semiconductors

BLF645

Broadband power LDMOS transistor

1.3 Applications

Communication transmitter applications in the HF to 1400 MHz frequency range

Industrial applications in the HF to 1400 MHz frequency range

2.

Pinning information

[1]

Connected to flange.

3.

Ordering information

4.

Limiting values

5.

Thermal characteristics

[1]

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

1drain 1

2drain 2

3gate 1

4gate2

5source

[1]

5

12

4

3

4

3

5

1

2

sym117

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BLF645

-

flanged balanced LDMOST ceramic package; 2

mounting holes; 4 leads

SOT540A

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

65

V

gate-source voltage

−0.5

+11

V

drain current

-

32

A

storage temperature

−65

+150

°C

junction temperature

-

200

°C

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

thermal resistance from junction to case

[1] 0.67 K/W