BLF645 datasheet(6/13 Pages) NXP

6 / 13 page

BLF645_1

Product data sheet

Rev. 01 — 27 January 2010

6 of 13

NXP Semiconductors

BLF645

Broadband power LDMOS transistor

8.1.2 2-Tone CW

VDS = 32 V; IDq = 900 mA (for total device);

f = 1300 MHz; carrier spacing = 100 kHz.

VDS = 32 V; f = 1300 MHz; carrier spacing = 100 kHz.

(1) IDq = 200 mA (for total device).

(2) IDq = 400 mA (for total device).

(3) IDq = 600 mA (for total device).

(4) IDq = 900 mA (for total device).

(5) IDq = 1200 mA (for total device).

(6) IDq = 1400 mA (for total device).

(7) IDq = 1800 mA (for total device).

Fig 4.

Power gain and drain efficiency as function of

peak envelope load power; typical values

Fig 5.

Third order intermodulation distortion as a

function of peak envelope load power; typical

values

PL(PEP) (W)

160

120

001aal364

(dB)

ηD

(%)

ηD

PL(PEP) (W)

200

160

120

001aal365

−40

−20

IMD3

(dBc)

−60

−30

−10

−50

(1)

(2)

(3)

(4)

(5)

(6)

(7)

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