BLF645 datasheet(1/13 Pages) NXP

Part #	BLF645

Description	Broadband power LDMOS transistor

PDF	13 Pages

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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1.

Product profile

1.1 General description

A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial

applications. The transistor is suitable for the frequency range HF to 1400 MHz. The

excellent ruggedness and broadband performance of this device makes it ideal for digital

applications.

1.2 Features

CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent

drain current IDq = 0.9 A for total device:

Average output power = 100 W

Power gain = 18 dB

Drain efficiency = 56 %

2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent

drain current IDq = 0.9 A for total device:

Peak envelope load power = 100 W

Power gain = 18 dB

Drain efficiency = 45 %

Intermodulation distortion =

−32 dBc

Integrated ESD protection

Excellent ruggedness

High power gain

High efficiency

Excellent reliability

Easy power control

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

BLF645

Broadband power LDMOS transistor

Rev. 01 — 27 January 2010

Product data sheet

Table 1.

Typical performance

RF performance at Th = 25 °C in a common source test circuit.

Mode of operation

f

VDS

PL

PL(PEP)

Gp

η

D

IMD

(MHz)

(V)

(W)

(dB)

(%)

(dBc)

CW, class-AB

1300

32

100

-

18

56

-

2-tone, class-AB

1300

32

-

100

18

45

−32

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