CHA2194

Ref : DSCHA21942035 -04-Feb.-02

1/10

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

36-44GHz Low Noise Amplifier

Self biased

GaAs Monolithic Microwave IC

Description

The circuit is a three-stage self biased wide

band

monolithic

low

noise

amplifier,

designed for 36GHz to 44GHz point to point

and point to multipoint communication .

The circuit is manufactured with a standard

HEMT process : 0.25µm gate length, via

holes through the substrate, air bridges and

electron beam gate lithography.

It is supplied in chip form.

Main Feature

§ Broad band performance 36-44GHz

§ 3dB noise figure

§ 19dB gain, ± 0.5dB gain flatness

§ Low DC power consumption, 45mA

§ 20dBm 3rd order intercept point

Main Characteristics

On wafer typical measurement

Tamb = +25°C

Symbol

Parameter

Min

Typ

Max

Unit

NF

Noise figure at freq : 40GHz

3

4

dB

G

Gain

17

19

dB

∆G

Gain flatness

± 0.5

± 1

dB

ESD Protections : Electrostatic discharge sensitive device observe handling precautions !

-22

-20

-18

-16

-14

-12

-10

-8

-6

-4

-2

0

2

4

6

8

10

12

14

16

18

20

22

24

26

28

22

24

26

28

30

32

34

36

38

40

42

44

46

48

50

52

54

56

58

60

Frequency ( GHz )

-25,00

-15,00

-5,00

5,00

15,00

25,00

dBS21

NF

dBS11

dBS22