CHA4094

Ref. : DSCHA40949349 – 15 Dec. 99

1/4

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

36-40GHz High Power Amplifier

GaAs Monolithic Microwave IC

Description

The CHA4094 is a high gain broadband three-

stage balanced monolithic power amplifier. It is

designed for a wide range of applications, from

military to commercial communication systems.

The circuit is manufactured with a PM-HEMT

process, 0.25µm gate length, via holes through

the substrate, air bridges and electron beam

gate lithography.

It is available in chip form.

Main Features

■ Broadband performances

■ 22 dBm output power ( 1dB gain comp. )

■ 9 dB ± 1 dB gain

■ Chip size :

1.65 X 2.05 X 0.10 mm

Typical on wafer measurements :

-30

-25

-20

-15

-10

-5

0

5

10

15

28

30

32

34

36

38

40

42

Frequency (GHz)

(dB)

Gain

IN

OUT

Main Characteristics

Tamb. = 25°C

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

36

40

GHz

G

Small signal gain

7

9

dB

P1dB

Output power at 1dB gain compression

22

dBm

Id

Bias current

750

920

mA

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !