EC2612

40GHz Super Low Noise PHEMT

Ref. : DSEC26120077 -17-Marc-00

2/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Symbol

Parameter

Test

Conditions

Min

Typ

Max

Unit

Idss

Saturated drain current

Vds = 2V

Vgs = 0V

10

35

60

mA

Vp

Pinch off voltage

Vds = 2V

Ids = 0.1mA

-1.0

-0.7

-0.3

V

Gm

Transconductance

Vds = 2V

Ids = 25mA

50

70

mS

Igsd

Gate to source/drain leakage

current

Vgsd = -2V

5

µA

Dynamic characteristics

Tamb=25°C

Symbol

Parameter

Test

Conditions

Min

Typ.

Max

Unit

F= 12GHz

0.5

0.7

dB

NF

Minimum noise figure

F= 30GHz

1.3

1.7

Vds=2V

F= 40GHz

1.5

1.9

dB

Ids=Idss/3

F= 12GHz

13

14

dB

Ga

Associated Gain

F= 30GHz

9

10

F= 40GHz

8

9.5

dB

Tamb = +25°C

Symbol

Parameter

Values

Units

Vds

Drain to source voltage

3.5

V

Vgs

Gate to source voltage

-2.5

V

Pt

Total power dissipation

280

mW

Tch

Operating channel temperature

+175

°C

Tstg

Storage temperature range

-55 to +175

°C

(1) Operation of this device above any one of these parameters may cause permanent damage