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74ABT821 Datasheet(PDF) 6 Page - NXP Semiconductors

Part # 74ABT821
Description  10-bit D-type flip-flop; positive-edge trigger; 3-state
PDF  16 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

74ABT821 Datasheet(HTML) 6 Page - NXP Semiconductors

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74ABT821_3
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 25 February 2010
6 of 16
NXP Semiconductors
74ABT821
10-bit D-type flip-flop; positive-edge trigger; 3-state
9.
Static characteristics
[1]
For valid test results, data must not be loaded into the flip-flops (or latches) after applying the power.
[2]
This parameter is valid for any VCC between 0 V and 2.1 V with a transition time of up to 10 ms. For VCC =2.1 VtoVCC =5V ± 10 %, a
transition time of up to 100
µs is permitted.
[3]
Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
[4]
This is the increase in supply current for each input at 3.4 V.
Table 6.
Static characteristics
Symbol Parameter
Conditions
25
°C
−40 °Cto+85 °C Unit
Min
Typ
Max
Min
Max
VIK
input clamping voltage
VCC = 4.5 V; IIK = −18 mA
−1.2
−0.9
-
−1.2
-
V
VOH
HIGH-level output
voltage
VI = VIL or VIH
VCC = 4.5 V; IOH = −3 mA
2.5
2.9
-
2.5
-
V
VCC = 5.0 V; IOH = −3 mA
3.0
3.4
-
3.0
-
V
VCC = 4.5 V; IOH = −32 mA
2.0
2.4
-
2.0
-
V
VOL
LOW-level output
voltage
VCC = 4.5 V; IOL = 64 mA;
VI =VIL or VIH
-
0.42
0.55
-
0.55
V
VOL(pu)
power-up LOW-level
output voltage
VCC = 5.5 V; IO = 1 mA;
VI = GND or VCC
[1]
-
0.13
0.55
-
0.55
V
II
input leakage current
VCC = 5.5 V; VI = GND or 5.5 V
-
±0.01 ±1.0
-
±1.0
µA
IOFF
power-off leakage
current
VCC = 0 V; VI or VO ≤ 4.5 V
-
±5.0 ±100
-
±100
µA
IO(pu/pd)
power-up/power-down
output current
VCC = 2.0 V; VO = 0.5 V;
VI = GND or VCC; OEn HIGH
[2]
-
±5.0
±50
-
±50
µA
IOZ
OFF-state output current VCC = 5.5 V; VI =VIL or VIH
VO = 2.7 V
-
5.0
50
-
50
µA
VO = 0.5 V
-
−5.0
−50
-
−50
µA
ILO
output leakage current
HIGH-state; VO = 5.5 V;
VCC = 5.5 V; VI = GND or VCC
-
5.0
50
-
50
µA
IO
output current
VCC = 5.5 V; VO = 2.5 V
[3]
−180
−80
−50
−180
−50
mA
ICC
supply current
VCC = 5.5 V; VI = GND or VCC
outputs HIGH-state
-
0.5
250
-
250
µA
outputs LOW-state
-
25
38
-
38
mA
outputs disabled
-
0.5
250
-
250
µA
∆ICC
additional supply current per input pin; VCC = 5.5 V; one
input at 3.4 V; other inputs at VCC
or GND
[4]
-
0.5
1.5
-
1.5
mA
CI
input capacitance
VI =0V orVCC
-4-
-
-
pF
CO
output capacitance
outputs disabled; VO =0V orVCC
-7-
-
-
pF



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