Microsemi

Analog Mixed Signal Group

NX2158

3

Rev.1.2

12/30/09

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

PARAMETER

SYM

Test Condition

M in

TYP

MAX

Un its

ENBUS

ENBUS threshold

1

1.2

1.4

V

ENBUS Hysteresis

0.05

0.1

0.15

V

SS

Soft Start time

Tss

Rt=44k

1.6

mS

Oscillator (Rt)

Frequency

Rt=44k

550

640

720

kHz

Ram p-Amplitude Voltage

V

RAMP

0.4

0.5

0.58

V

LDRV Max Duty Cycle

Rt=44k

60

70

80

%

HDRV Min Controlable On Time

250

nS

Erro r Amplifiers

T ransconductance

1500

1800

2500

umho

Input Bias Current

Ib

100

nA

Com p SD Threshold

0.3

V

High Side Driver(C

Output Impedance , Sourcing

R

I=200mA

1.9

ohm

Output Impedance , Sinking

I=200mA

1.7

ohm

Rise Time

THdrv(Rise)

14

ns

Fall T ime

THdrv(Fall)

17

ns

Deadband Time

Tdead(L to

Ldrv going Low to Hdrv

30

ns

Low Side Driver (C

Output Impedance, Sourcing

I=200mA

1.9

ohm

Output Impedance, Sinking

Current

R

I=200mA

1

ohm

Rise Time

T Ldrv(Rise)

13

ns

Fall T ime

TLdrv(Fall)

12

ns

OCP

OCP current

30

37

50

uA

Over temperature

Threshold

150

Hysteresis

20

PGOOD

Pgood high rising threshold

78

90

95

% Vref

Power good hysteresis

5

%

10

ns

Deadband Time

Tdead(H to

L)

SW going Low to Ldrv

going High, 10% to 10%