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MP6H1 Datasheet(PDF) 1 Page - Rohm |
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MP6H1 Datasheet(HTML) 1 Page - Rohm |
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1 / 4 page ![]() MP6H1 Transistors Rev.A 1/3 General purpose (Dual digital transistors) MP6H1 Features 1) High hFE. hFE=300(Min.)(VCE / IC=2V/500mA) 2) Low saturation voltage. VCE(sat)=400mV(Max.) (IC/IB=500mA/5mA) 3) Built in Zener diode for protection against surges when connected to inductive load. Structure NPN silicon epitaxial planar transistor (Resistor built-in type) Applications Driver Packaging specifications and hFE Equivalent circuit Type MPT6 Taping TR 1000 Package Packaging style Code Basic ordering unit(pieces) ○ MP6H1 Absolute maximum ratings (Ta=25 °C) 《DTR1》 《DTR2》 Continuous Pulsed ∗1 Pw=10ms, Single pulse ∗2 Each terminal mounted on a ceramic board VCBO VCEO ICP ∗1 2 Power dissipation Junction temperature Storage temperature Unit V V V A Tstg VEBO Tj A W/TOTAL W/ELEMENT 150 -55 to +150 2.0 Limits PD *2 5 60±10 1.4 ℃ ℃ Symbol IC 1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 60±10 Dimensions (Unit : mm) MPT6 (6) (5) (4) (1) (2) (3) (1) : Emitter (DTr1) (2) : Base (DTr1) (3) : Collector (DTr2) (4) : Emitter (DTr2) (5) : Base (DTr2) (6) : Collector (DTr1) Di Di DTr2 R=10k Ω DTr1 R R (6) (5) (4) (1) (2) (3) |
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