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SSM4816SM Datasheet(PDF) 6 Page - Silicon Standard Corp. |
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SSM4816SM Datasheet(HTML) 6 Page - Silicon Standard Corp. |
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6 / 9 page ![]() www.SiliconStandard.com 6 of 9 SSM4816SM Rev.1.01 4/16/2004 MOSFET-1 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off)t f VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 10 100 1000 1 5 9 1317 2125 29 V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0 4 8 12 16 0 5 10 15 20 25 Q G , Total Gate Charge (nC) I D =6A V DS =15V V DS =20V V DS =24V 0.01 0.1 1 10 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) 100us 1ms 10ms 100ms 1s DC T A =25 o C Single Pulse 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =125°C/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse |
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