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74HC3G06GD Datasheet(PDF) 3 Page - NXP Semiconductors

Part # 74HC3G06GD
Description  Triple inverter with open-drain outputs
PDF  13 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

74HC3G06GD Datasheet(HTML) 3 Page - NXP Semiconductors

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74HC_HCT3G06_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 May 2009
3 of 13
NXP Semiconductors
74HC3G06; 74HCT3G06
Triple inverter with open-drain outputs
6.2 Pin description
7.
Functional description
[1]
H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF-state.
8.
Limiting values
[1]
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
For TSSOP8 package: above 55
°C the value of P
tot derates linearly with 2.5 mW/K.
For VSSOP8 package: above 110
°C the value of P
tot derates linearly with 8 mW/K.
For XSON8U package: above 118
°C the value of P
tot derates linearly with 7.8 mW/K.
Table 3.
Pin description
Symbol
Pin
Description
1A, 2A, 3A
1, 3, 6
data input
GND
4
ground (0 V)
1Y, 2Y, 3Y
7, 5, 2
data output
VCC
8
supply voltage
Table 4.
Function table[1]
Input nA
Output nY
LZ
HL
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
−0.5
7.0
V
IIK
input clamping current
VI < −0.5 V or VI >VCC + 0.5 V
[1] -
±20
mA
IOK
output clamping current
VO < −0.5 V
[1]
−20
-
mA
VO
output voltage
active mode
[1]
−0.5
VCC + 0.5
V
high-impedance mode
[1]
−0.5
7.0
V
IO
output current
VO = −0.5 V to 7.0 V
[1] -25
mA
ICC
supply current
[1] -50
mA
IGND
ground current
[1]
−50
-
mA
Tstg
storage temperature
−65
+150
°C
PD
dynamic power dissipation
Tamb = −40 °C to +125 °C
[2] -
300
mW



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