74HC3G06GD datasheet(5/13 Pages) NXP

5 / 13 page

74HC_HCT3G06_3

Product data sheet

Rev. 03 — 11 May 2009

5 of 13

NXP Semiconductors

74HC3G06; 74HCT3G06

Triple inverter with open-drain outputs

[1]

Typical values are measured at Tamb =25 °C.

11. Dynamic characteristics

74HCT3G06

VIH

HIGH-level input

voltage

VCC = 4.5 V to 5.5 V

2.0

1.6

2.0

VIL

LOW-level input

voltage

VCC = 4.5 V to 5.5 V

1.2

0.8

VOL

LOW-level output

voltage

VI = VIH or VIL

IO = 20 µA; VCC = 4.5 V

0.1

IO = 4.0 mA; VCC = 4.5 V

0.15

0.33

0.4

input leakage

current

VI =VCC or GND; VCC = 5.5 V

±1.0

µA

ILO

output leakage

current

VI =VIL; VO =VCC or GND

±5.0

±10

µA

ICC

supply current

per input pin; VCC = 5.5 V;

VI =VCC or GND; IO =0A;

µA

∆ICC

additional supply

current

per input; VCC = 4.5 V to 5.5 V;

VI =VCC − 2.1 V; IO =0A

375

410

µA

input capacitance

1.5

Table 7.

Static characteristics …continued

Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb =25 °C.

Symbol

Parameter

Conditions

−40 °C to +85 °C

−40 °C to +125 °C

Unit

Min

Typ[1]

Max

Min

Max

Table 8.

Dynamic characteristics

Voltages are referenced to GND (ground = 0 V); all typical values are measured at Tamb =25 °C; for test circuit see Figure 7.

Symbol Parameter

Conditions

−40 °C to +85 °C

−40 °C to +125 °C

Unit

Min

Typ

Max

Min

Max

74HC3G06

tPZL

OFF-state to LOW

propagation delay

nA to nY; see Figure 6

VCC = 2.0 V

125

VCC = 4.5 V

VCC = 6.0 V

tPLZ

LOW to OFF-state

propagation delay

nA to nY; see Figure 6

VCC = 2.0 V

125

VCC = 4.5 V

VCC = 6.0 V

tTHL

HIGH to LOW output

transition time

nY; see Figure 6

VCC = 2.0 V

125

VCC = 4.5 V

VCC = 6.0 V

CPD

power dissipation

capacitance

VI = GND to VCC

[1]

-4-

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