PA98 • PA98A

2

PA98U

P r o d u c t I n n o v a t i o n F r o m

ThePA98isconstructedfromMOSFETtransistors.ESDhandlingproceduresmustbeobserved.

Theexposedsubstratecontainsberyllia(BeO).Donotcrush,machine,orsubjecttotemperatures

inexcessof850°Ctoavoidgeneratingtoxicfumes.

CAUTION

1

2

3

4

5

6

7

8

9

10

–IN

+IN

+Vs

–Vs

TO LOAD

AND FEEDBACK

11

12

Rc

Cc

*

*

* Bypassing required.

NC

PATENTED

12-pin SIP

PACKAGE

STYLE DP

Formed leads available

Package style EE

EXTERNAL CONNECTIONS

Parameter

Symbol

Min

Max

Units

SUPPLYVOLTAGE,+V

450

V

OUTPUTCURRENT,continuouswithinSOA

200

mA

POWERDISSIPATION,continuous@T

30

W

INPUTVOLTAGE,differential

-25

25

V

INPUT VOLTAGE, common mode

-V

S

V

S

V

TEMPERATURE,pinsolder,10smax.

260

°C

TEMPERATURE,junction(Note2)

150

°C

TEMPERATURERANGE,storage

−40

85

°C

OPERATINGTEMPERATURERANGE,case

−25

85

°C

1. CHARACTERISTICS AND SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS

SPECIFICATIONS

Parameter

Test Condi-

PA98

PA98A

Units

Min

Typ

Max

Min

Typ

Max

INPUT

OFFSETVOLTAGE,initial

0.5

2

0.25

0.5

mV

OFFSETVOLTAGEvs.temp

Fulltemprange

10

30

5

10

µV/°C

OFFSETVOLTAGEvs.supply

3

10

*

*

µV/V

OFFSETVOLTAGEvs.time

75

*

µV/kHz

BIASCURRENT,initial(Note3)

5

50

3

10

pA

BIASCURRENT,vs.supply

0.01

*

pA/V

OFFSETCURRENT,initial

(Note 3)

10

100

3

30

pA

INPUTIMPEDANCE,DC

*

Ω

INPUT CAPACITANCE

4

*

pF

COMMONMODEVOLTAGE

RANGE

(Note 4)

±V

*

V

COMMONMODEREJECTION,

DC

V

90

110

*

*

dB