2004 Nov 05

3

NXP Semiconductors

Product data sheet

NPN medium power transistor;

20 V, 1 A

BC368

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1.

Refer to SOT54 (SC-43A) standard mounting conditions.

2.

Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

32

V

collector-emitter voltage

open base

−

20

V

emitter-base voltage

open collector

−

5

V

output current (DC)

−

1

mA

peak collector current

−

2

mA

peak collector current

−

200

mA

total power dissipation

−

0.83

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

ambient temperature

−65

+150

°C

handbook, halfpage

−65

−555

Tamb (°C)

Ptot

(mW)

175

1000

0

800

115

600

400

200

MLE329

Fig.1 Power derating curve.