BC368 datasheet(5/9 Pages) NXP

5 / 9 page

2004 Nov 05

NXP Semiconductors

Product data sheet

NPN medium power transistor;

20 V, 1 A

BC368

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = 25 V; IE = 0 A

−

100

VCB = 25 V; IE = 0 A;

Tamb = 150 °C

−

μA

IEBO

emitter-base cut-off current

VEB = 5 V; IC = 0 A

−

100

hFE

DC current gain

VCE = 10 V; IC = 5 mA

−

VCE = 1 V; IC = 500 mA

−

375

VCE = 1 V; IC = 1 mA

−

VCEsat

collector-emitter saturation voltage

IC = 1 A; IB = 100 mA

−

500

VBE

base-emitter voltage

VCE = 10 V; IC = 5 mA

−

700

VCE = 1 V; IC = 1 A

−

collector capacitance

VCB = 10 V; IE = ie = 0 A;

f = 1 MHz

−

transition frequency

VCE = 5 V; IC = 50 mA;

f = 100 MHz

170

−

MHz

handbook, halfpage

(1)

(A)

VCE (V)

2.4

1.6

1.2

2.0

0.8

0.4

MLE325

(8)

(10)

(6)

(4)

(3)

(2)

(9)

(5)

(7)

Fig.3

Collector current as a function of

collector-emitter voltage; typical values.

Tamb = 25 °C.

(1) IB = 10 mA.

(2) IB = 9 mA.

(3) IB = 8 mA.

(4) IB = 7 mA.

(5) IB = 6 mA.

(6) IB = 5 mA.

(7) IB = 4 mA.

(8) IB = 3 mA.

(9) IB = 2 mA.

(10) IB = 1 mA.

handbook, halfpage

10−1

MLE326

10−4

10−3

10−2

10−1

IC (A)

VBE

(V)

Fig.4

Base-emitter voltage as function of collector

current; typical values.

VCE = 1 V.

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