BC856S datasheet(5/12 Pages) NXP

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BC856S_2

Product data sheet

Rev. 02 — 19 February 2009

5 of 12

NXP Semiconductors

BC856S

65 V, 100 mA PNP/PNP general-purpose transistor

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

Table 7.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

ICBO

collector-base cut-off

current

VCB = −30 V; IE =0A

−15

VCB = −30 V; IE =0A;

Tj = 150 °C

−5

µA

IEBO

emitter-base cut-off

current

VEB = −5 V; IC =0A

−100

hFE

DC current gain

VCE = −5 V; IC = −2 mA

110

VCEsat

collector-emitter

saturation voltage

IC = −10 mA;

IB = −0.5 mA

−100

IC = −100 mA; IB = −5mA

[1] --

−300

VBEsat

base-emitter

saturation voltage

IC = −10 mA;

IB = −0.5 mA

700

VBE

base-emitter voltage

IC = −2 mA; VCE = −5V

−600

−650

−750

IC = −10 mA; VCE = −5V

−820

collector capacitance IE =ie =0A; VCB = −10 V;

f=1MHz

2.5

transition frequency

IC = −10 mA; VCE = −5V;

f = 100 MHz

100

MHz

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