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BC856S Datasheet(PDF) 1 Page - NXP Semiconductors |
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BC856S Datasheet(HTML) 1 Page - NXP Semiconductors |
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1 / 12 page ![]() 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 1.2 Features I Low collector capacitance I Low collector-emitter saturation voltage I Closely matched current gain I Reduces number of components and board space I No mutual interference between the transistors 1.3 Applications I General-purpose switching and amplification 1.4 Quick reference data 2. Pinning information BC856S 65 V, 100 mA PNP/PNP general-purpose transistor Rev. 02 — 19 February 2009 Product data sheet Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VCEO collector-emitter voltage open base - - −65 V IC collector current - - −100 mA hFE DC current gain VCE = −5V; IC = −2mA 110 - - Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 emitter TR1 2 base TR1 3 collector TR2 4 emitter TR2 5 base TR2 6 collector TR1 13 2 4 5 6 sym018 2 1 3 5 6 TR1 TR2 4 |
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