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BC856S Datasheet(PDF) 7 Page - NXP Semiconductors |
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BC856S Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 12 page ![]() BC856S_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 19 February 2009 7 of 12 NXP Semiconductors BC856S 65 V, 100 mA PNP/PNP general-purpose transistor IC/IB =20 (1) Tamb = 150 °C (2) Tamb =25 °C (3) Tamb = −55 °C VCE = −5 V; f = 1 MHz; Tamb =25 °C Fig 8. Per transistor: Collector-emitter saturation voltage as a function of collector current; typical values Fig 9. Per transistor: Transition frequency as a function of collector current; typical values 006aab433 IC (mA) −10−1 −103 −102 −1 −10 −10−1 −1 VCEsat (V) −10−2 (1) (2) (3) 006aab434 IC (mA) −10−1 −102 −10 −1 108 109 fT (Hz) 107 |
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