NXP Semiconductors

Product specification

VHF power MOS transistor

BLF147

FEATURES

• High power gain

• Low intermodulation distortion

• Easy power control

• Good thermal stability

• Withstands full load mismatch.

APPLICATIONS

• Industrial and military applications in the HF/VHF

frequency range.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS

transistor encapsulated in a 4-lead, SOT121B flange

package with a ceramic cap. All leads are isolated from the

flange. A marking code, showing gate-source voltage

applications. Refer to the “General” section of the

handbook for further information.

PINNING - SOT121B

CAUTION

This product is supplied in anti-static packing to prevent

damage caused by electrostatic discharge during

transport and handling. For further information, refer to

Philips specs.: SNW-EQ-608, SNW-FQ-302A, and

SNW-FQ-302B.

PIN

DESCRIPTION

1

drain

2

source

3

gate

4

source

Fig.1 Simplified outline and symbol.

handbook, halfpage

s

d

g

MAM267

14

3

2

QUICK REFERENCE DATA

MODE OF

OPERATION

f

(MHz)

(V)

(W)

(dB)

η

D

(%)

(dB)

(dB)

SSB, class-AB

28

28

150 (PEP)

>17

>35

<−30

<−30

CW, class-B

108

28

150

typ. 14

typ. 70

−−

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

Rev. 06 - 5 December 2006

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