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BLF878 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BLF878 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 18 page ![]() BLF878_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 15 June 2009 4 of 18 NXP Semiconductors BLF878 UHF power LDMOS transistor 7. Application information [1] IDq = 1.4 A for total device. [2] Measured [dBc] with delta marker at 4.3 MHz from center frequency. VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance as a function of drain-source voltage; typical values per section; capacitance value without internal matching VDS (V) 060 40 20 001aai075 150 250 350 Coss (pF) 50 Table 7. RF performance in a common-source narrowband 860 MHz test circuit Tcase =25 °C unless otherwise specified. Mode of operation f VDS IDq PL(PEP) PL(AV) Gp ηD IMD3 (MHz) (V) (A) (W) (W) (dB) (%) (dBc) 2-Tone, class AB f1 = 860; f2 = 860.1 40 1.4[1] 300 - > 18 > 42 < −31 DVB-T (8k OFDM) 858 40 1.4[1] - 75 > 18 > 29 < −29 [2] |
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