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MC9S08JS16CFK Datasheet(PDF) 25 Page - Freescale Semiconductor, Inc |
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MC9S08JS16CFK Datasheet(HTML) 25 Page - Freescale Semiconductor, Inc |
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25 / 32 page ![]() Electrical Characteristics MC9S08JS16 Series MCU Data Sheet, Rev. 4 Freescale Semiconductor 25 3.12 USB Electricals The USB electricals for the S08USBV1 module conform to the standards documented by the Universal Serial Bus Implementers Forum. For the most up-to-date standards, visit http://www.usb.org. If the Freescale S08USBV1 implementation requires additional or deviant electrical characteristics, this space would be used to communicate that information. Table 12. Flash Characteristics Num C Characteristic Symbol Min Typical1 1 Typical values are based on characterization data at V DD = 5.0 V, 25 °C unless otherwise stated. Max Unit 1 D Supply voltage for program/erase Vprog/erase 2.7 — 5.5 V 2 D Supply voltage for read operation VRead 2.7 — 5.5 V 3 D Internal FCLK frequency2 2 The frequency of this clock is controlled by a software setting. fFCLK 150 — 200 kHz 4 D Internal FCLK period (1/FCLK) tFcyc 5 — 6.67 μs 5 P Byte program time (random location)2 tprog 9 tFcyc 6 P Byte program time (burst mode)2 tBurst 4 tFcyc 7 P Page erase time3 3 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for calculating approximate time to program and erase. tPage 4000 tFcyc 8 P Mass erase time2 tMass 20,000 tFcyc 9 C Program/erase endurance4 TL to TH = –40°C to 85 °C T = 25 °C 4 Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory. — 10,000 — — 100,000 — — cycles 10 C Data retention5 5 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to 25 °C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory. tD_ret 15 100 — years Table 13. Internal USB 3.3 V Voltage Regulator Characteristics Symbol Min Typical Max Unit Regulator operating voltage Vregin 3.9 — 5.5 V Vreg output Vregout 33.3 3.6 V Vreg filter capacitor Cusbreg — 100 — pF Vusb33 input with internal Vreg disabled Vusb33in 33.3 3.6 V |
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