PUMH15 datasheet(4/9 Pages) NXP

4 / 9 page

PEMH15_PUMH15_4

Product data sheet

Rev. 04 — 15 November 2009

4 of 9

NXP Semiconductors

PEMH15; PUMH15

NPN/NPN resistor-equipped transistors; R1 = 4.7 k

Ω, R2 = 4.7 kΩ

Thermal characteristics

[1]

Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

[2]

Reflow soldering is the only recommended soldering method.

Characteristics

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

Rth(j-a)

thermal resistance from

junction to ambient

in free air

SOT363

[1] --

625

K/W

SOT666

[1][2] --

625

K/W

Per device

Rth(j-a)

thermal resistance from

junction to ambient

in free air

SOT363

[1] --

416

K/W

SOT666

[1][2] --

416

K/W

Table 8.

Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

ICBO

collector-base cut-off

current

VCB = 50 V; IE = 0 A

100

ICEO

collector-emitter

cut-off current

VCE = 30 V; IB = 0 A

--1

μA

VCE = 30 V; IB = 0 A;

Tj = 150 °C

--50

μA

IEBO

emitter-base cut-off

current

VEB = 5 V; IC = 0 A

--0.9

hFE

DC current gain

VCE = 5 V; IC = 10 mA

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA

150

VI(off)

off-state input voltage

VCE = 5 V; IC = 100 μA-

1.1

0.5

VI(on)

on-state input voltage

VCE = 0.3 V; IC = 20 mA

2.5

1.9

bias resistor1 (input)

3.3

4.7

6.1

R2/R1

bias resistor ratio

0.8

1.2

collector capacitance

VCB = 10 V; IE = ie = 0 A;

f=1MHz

--2.5

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