MUSES01 datasheet(4/12 Pages) NJRC

4 / 12 page

MUSES01

- 4 -

Ver.2009-12-18

Application Notes

•Package Power, Power Dissipation and Output Power

IC is heated by own operation and possibly gets damage when the junction power exceeds the acceptable value called

Power Dissipation PD. The dependence of the MUSES01 PD on ambient temperature is shown in Fig 1. The plots are

depended on following two points. The first is PD on ambient temperature 25°C, which is the maximum power dissipation.

The second is 0W, which means that the IC cannot radiate any more. Conforming the maximum junction temperature

Tjmax to the storage temperature Tstg derives this point. Fig.1 is drawn by connecting those points and conforming the PD

lower than 25°C to it on 25°C. The PD is shown following formula as a function of the ambient temperature between those

points.

Dissipation Power

[W] (Ta=25°C to Ta=150°C)

Where,

θja is heat thermal resistance which depends on parameters such as package material, frame material and so on.

Therefore, PD is different in each package.

While, the actual measurement of dissipation power on MUSES01 is obtained using following equation.

(Actual Dissipation Power) = (Supply Voltage VDD) X (Supply Current IDD) – (Output Power Po)

The MUSES01 should be operated in lower than PD of the actual dissipation power.

To sustain the steady state operation, take account of the Dissipation Power and thermal design.

PD [mW]

Ta [deg]

-40

(Topr max.)

150

(Tstg max.)

910

DIP8

Fig.1 Power Dissipations vs. Ambient Temperature on the MUSES01

Tjmax - Ta

θja

PD =

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