PMD9050D datasheet(6/13 Pages) NXP

6 / 13 page

PMD9050D_1

Product data sheet

Rev. 01 — 27 November 2006

6 of 13

NXP Semiconductors

PMD9050D

MOSFET driver

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

[2]

When switched from IF = 400 mA to IR = 400 mA; RL = 100 Ω; measured at IR = 40 mA.

[3]

When switched from IF = 400 mA; tr =30ns.

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor with negative polarity

ICBO

collector-base cut-off

current

VCB =30V; IE = 0 A

VCB =30V; IE =0A;

Tj = 150 °C

--10

µA

IEBO

emitter-base cut-off

current

VEB =5V; IC = 0 A

100

hFE

DC current gain

TR1 and TR3 (NPN) VCE =5V; IC = 1 mA

200

320

450

VCE =5V; IC = 100 mA

165

VCE =5V; IC = 200 mA

TR2 (PNP)

VCE =5V; IC = 1 mA

200

270

450

VCE =5V; IC = 100 mA

120

VCE =5V; IC = 200 mA

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA

200

IC = 100 mA; IB = 5 mA

200

400

IC = 200 mA; IB = 20 mA

350

500

VBEsat

base-emitter saturation

voltage

IC = 10 mA; IB = 0.5 mA

0.74

IC = 100 mA; IB = 5 mA

0.91

IC = 200 mA; IB =20mA

1.2

VBE

base-emitter voltage

VCE =5V; IC = 2 mA

660

Diode (D1)

forward voltage

IF = 200 mA

[1] -

1.1

reverse current

VR = 60 V

100

VR =60V; Tj = 150 °C

100

µA

trr

reverse recovery time

[2] --6

VFR

forward recovery

voltage

[3] --2

Transistor 1 (TR1)

delay time

IC = 0.05 A; IBon = 2.5 mA;

IBoff = −2.5 mA

-12

rise time

ton

turn-on time

storage time

853

fall time

205

toff

turn-off time

1058

PMD9050D Datasheet(PDF) 6 Page - NXP Semiconductors

PMD9050D Datasheet(HTML) 6 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datasheet Download

Link URL