2003 Nov 24

3

NXP Semiconductors

Product data sheet

PNP transistor/Schottky-diode module

PMEM4020PD

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

Notes

1.

Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT457.

2.

Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pads for collector and

3.

Mounted on a ceramic printed-circuit board; single-sided copper; tinplated; standard footprint.

4.

Solder point of collector or cathode tab.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

PNP transistor

collector-base voltage

open emitter

−

−40

V

collector-emitter voltage

open base

−

−40

V

emitter-base voltage

open collector

−

−5

V

collector current (DC)

note 1

−

−0.75

A

note 2

−

−1

A

note 3

−

−1.3

A

−

−2

A

peak collector current

−

−3

A

peak base current

−

−1

A

total power dissipation

−

295

mW

−

400

mW

−

500

mW

−

1000

mW

junction temperature

−

150

°C

Schottky barrier diode

continuous reverse voltage

−

20

V

continuous forward current

−

1

A

non-repetitive peak forward current

t = 8.3 ms half sinewave; JEDEC

method

−

5

A

total power dissipation

−

295

mW

−

400

mW

−

500

mW

−

1000

mW

junction temperature

note 2

−

150

°C

Combined device

total power dissipation

−

600

mW

storage temperature

−65

+150

°C

operating ambient temperature

note 2

−65

+150

°C