PMEM4020PD datasheet(4/11 Pages) NXP

4 / 11 page

2003 Nov 24

NXP Semiconductors

Product data sheet

PNP transistor/Schottky-diode module

PMEM4020PD

THERMAL CHARACTERISTICS

Notes

For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses

PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and

IF (AV) rating will be available on request.

Solder point of collector or cathode tab.

Device mounted on a ceramic printed-circuit board; single-sided copper; tinplated; standard footprint.

Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector and

cathode both 1 cm2.

Device mounted on a FR4 printed-circuit board, single-sided copper; tinplated; standard footprint for SOT457.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Single device

Rth(j-s)

thermal resistance from junction to

solder point

in free air; notes 1 and 2

K/W

Rth(j-a)

thermal resistance from junction to

ambient

in free air; notes 1 and 3

250

K/W

in free air; notes 1 and 4

315

K/W

in free air; notes 1 and 5

425

K/W

Combined device

Rth(j-a)

thermal resistance from junction to

ambient

in free air; notes 1 and 3

208

K/W

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