PMEM4020PD datasheet(7/11 Pages) NXP

7 / 11 page

2003 Nov 24

NXP Semiconductors

Product data sheet

PNP transistor/Schottky-diode module

PMEM4020PD

handbook, halfpage

−10

−1

−10−1

MHC089

−10−1

−1

−10

VBE

(V)

IC (mA)

−103

−102

−104

(1)

(2)

(3)

Fig.6

Base-emitter voltage as a function of

collector current; typical values.

PNP transistor; VCE = −5 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

−103

−102

−10

−1

MHC090

−1

−10

VCEsat

(mV)

IC (mA)

−102

−103

−104

(1)

(2)

(3)

Fig.7

Collector-emitter saturation voltage as a

function of collector current; typical values.

PNP transistor; IC/IB = 10.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

10−1

102

MHC091

−10−1

−1

−10

RCEsat

(

Ω)

IC (mA)

−103

−102

−104

(1)

(2)

(3)

Fig.8

Equivalent on-resistance as a function of

collector current; typical values.

PNP transistor; IC/IB = 10.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−1000

300

100

200

250

150

−200

−400

(MHz)

IC (mA)

−600

−800

MHC092

Fig.9

Transition frequency as a function of

collector current.

PNP transistor; VCE = −10 V.

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