PXT4401 datasheet(6/10 Pages) NXP

6 / 10 page

2004 Nov 22

NXP Semiconductors

Product data sheet

NPN switching transistor

PXT4401

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector-base cut-off current

IE = 0 A; VCB = 60 V

−

IEBO

emitter-base cut-off current

IC = 0 A; VEB = 6 V

−

hFE

DC current gain

VCE = 1 V; (see Fig.6)

−

IC = 0.1 mA

−

IC = 1 mA

−

IC = 10 mA

−

IC = 150 mA; note 1

100

300

IC = 500 mA; VCE = 2 V; note 1

−

VCEsat

collector-emitter saturation

voltage

IC = 150 mA; IB = 15 mA; note 1

−

400

IC = 500 mA; IB = 50 mA; note 1

−

750

VBEsat

base-emitter saturation voltage

IC = 150 mA; IB = 15 mA; note 1

−

950

IC = 500 mA; IB = 50 mA; note 1

−

1.2

collector capacitance

IE =ie = 0 A; VCB = 5 V; f = 1 MHz

−

emitter capacitance

IC =ic = 0 A; VEB = 500 mV; f = 1 MHz −

transition frequency

IC = 20 mA; VCE = 10 V; f =100 MHz

250

−

MHz

Switching times (between 10% and 90% levels); (see Fig.7)

ton

turn-on time

ICon = 150 mA; IBon = 15 mA;

IBoff = −15 mA

−

delay time

−

rise time

−

toff

turn-off time

−

250

storage time

−

200

fall time

−

PXT4401 Datasheet(PDF) 6 Page - NXP Semiconductors

PXT4401 Datasheet(HTML) 6 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL