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2SJ360 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SJ360 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 6 page ![]() 2SJ360 2009-09-29 4 ① ② 0 0 40 80 120 200 0.5 1.0 1.5 2.0 160 0 −1 −2 −3 −5 −80 −40 0 40 80 120 160 −4 −0.1 −1 −10 −100 10 100 1000 −0.3 −3 −30 30 50 300 500 Ciss Coss Crss 0 0.1 0.2 0.4 0.5 0.7 0.8 −0.01 −1 −0.1 −0.03 −0.05 −0.3 −0.5 VGS = 1 V −3 −1 −10 0 −5 −3 0.3 0.6 1.2 0 −80 −40 120 160 40 0.4 0.8 2.0 1.6 0 80 ID = −2 A −1.5 −1.0 −0.5 ID = −2 A −1.5 −1.0 −0.5 VGS = −10 V VGS = −4 V Vth − Ta RDS (ON) − Ta IDR − VDS Common source Pulse test Common source Ta = 25°C Pulse test Common source VDS = −10 V ID = −1mA Pulse test PD − Ta ① 25.4mm×25.4mm×0.8mm Mounted on ceramic substrate ② Single Common source VGS = 0 V f = 1 MHz Ta = 25°C Ambient temperature Ta (°C) Ambient temperature Ta (°C) Capacitance – VDS Drain-source voltage VDS (V) Ambient temperature Ta (°C) Drain-source voltage VDS (V) |
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