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EMP216 Datasheet(PDF) 1 Page - Excelics Semiconductor, Inc. |
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EMP216 Datasheet(HTML) 1 Page - Excelics Semiconductor, Inc. |
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1 / 5 page ![]() EMP216 6 - 18 GHz 2 Watt Power Amplifier MMIC Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Page 1 of 5 Phone: 408-737-1711 Fax: 408-737-1868 Web: Dimension: 5330um X 3080um Thickness: 85um ± 15um FEATURES • 6 - 18 GHz Operating Frequency Range • 33 dBm Output Power at 1dB Compression • 20.0 dB Typical Small Signal Gain APPLICATIONS • Point-to-point and point-to-multipoint radio • Military Radar Systems • Test systems Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C, 50 ohm, VDD=8V, IDQ=1250mA) SYMBOL PARAMETER/TEST CONDITIONS MIN TYP MAX UNITS F Operating Frequency Range 6 18 GHz P1dB Output Power at 1dB Gain Compression 31 33 dBm GSS Small Signal Gain 17 20 dB G∆ Small Signal Gain Flatness ±1.2 dB ID1dB Supply current at 1dB Gain Compression 1400 mA PAE Power Added Efficiency at 1dB Gain Compression 20 % OIMD3 Output 3 rd Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 21.5dBm -43.0 dBc -8 -5 dB Input RL Input Return Loss 6GHz – 8GHz 8GHz – 18GHz -12 -8 dB Output RL Output Return Loss -15 -10 dB IDSS Saturated Drain Current VDD=3V, VGG=0V 2500 mA RTH Thermal Resistance (Au-Sn Eutectic Attach) 5.5 oC/W ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1 SYMBOL CHARACTERISTIC VALUE VDS Drain to Source Voltage 8V VGS Gate to Source Voltage - 4V IDD Drain Current Idss IGSF Forward Gate Current 70 mA PIN Input Power @ 3dB compression TCH Channel Temperature 175°C TSTG Storage Temperature -65/175°C PT Total Power Dissipation 22W 1. Operating the device beyond any of the above rating may result in permanent damage. www.excelics.com Revision 03 |
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