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TLP173A Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # TLP173A
Description  Telecommunications Control Equipment Data Acquisition System Security Equipment Measurement Equipment
PDF  10 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP173A Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TLP173A
2009-12-22
2
Absolute Maximum Rating (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Forward current
IF
50
mA
Forward current derating (Ta
≥ 25°C)
ΔIF/°C
−0.5
mA/°C
Reverse voltage
VR
5
V
Pulse forward current
(100
μs pulse, 100 pps)
IFP
1
A
LED
Junction temperature
Tj
125
°C
Off-state output terminal voltage
VOFF
60
V
On-state current
ION
70
mA
Forward current derating (Ta
≥ 25°C)
ΔION/°C
−0.7
mA/°C
Detector
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to 125
°C
Operating temperature
Topr
−40 to 85
°C
Lead soldering temperature (10 s)
Tsol
260
°C
Isolation voltage (AC, 1 min, R.H.
≤ 60%) (Note 1)
BVS
3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note: This product is more sensitive than conventional products to electrostatic discharge (ESD). It is therefore all
the more necessary to observe general precautions regarding ESD when handling this component.
Note 1: LED pins are shorted together. Detector pins are also shorted together.
Recommended Operating Conditions
Characteristics
Symbol
Min
Typ.
Max
Unit
Supply voltage
VDD
⎯
⎯
48
V
Forward current
IF
⎯
3
25
mA
On-state current
ION
⎯
⎯
60
mA
Operating temperature
Topr
−20
⎯
65
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
⎯
⎯
10
μA
LED
Capacitance
CT
V
= 0, f = 1 MHz
⎯
30
⎯
pF
Off-state current
IOFF
VOFF = 60 V
⎯
1
1000
nA
Detector
Capacitance
COFF
VOFF = 0, f = 1 MHz
⎯
10
⎯
pF



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