4-37
4
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
ü
SiGe HBT
Si CMOS
1
2
3
4
8
7
6
5
GND
GND
RF IN
GND
VDD1
VDD2
RF OUT
GND
RF2301
HIGH ISOLATION BUFFER AMPLIFIER
• Local Oscillator Buffer Amplifiers
• FDD and TDD Communication Systems
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
•Wireless LAN
• ISM Band Applications
The RF2301 is a high reverse isolation buffer amplifier.
The device is manufactured on a low-cost Gallium Ars-
enide MESFET process, and has been designed for use
as a general purpose buffer in high-end communication
systems operating at frequencies from less than 300MHz
to higher than 2500MHz. With +5 dBm output power, it
may also be used as a driver in transmitter applications.
Thedevice ispackaged inan8-leadplastic package. The
product is self-contained, requiring just a resistor and
blocking capacitors to operate. The output power, com-
bined with 50dB reverse isolation at 900MHz allows
excellent buffering of LO sources to impedance changes.
The device can be used in 3 V battery applications. The
unit has a total gain of 17dB with only 14 mA current from
a 3V supply.
• Single 2.7V to 6.0V Supply
• +4dBm Output Power
• 21dB Small Signal Gain
• 50dB Reverse Isolation at 900MHz
• Low DC Current Consumption of 14mA
• 300MHz to 2500MHz Operation
RF2301
High Isolation Buffer Amplifier
RF2301 PCBA
Fully Assembled Evaluation Board
4
Rev A8 010717
0.244
0.229
0.157
0.150
0.018
0.014
0.050
0.068
0.053
NOTES:
1. Shaded lead is Pin 1.
2. All dimensions are excluding
mold flash.
3. Lead coplanarity -
0.005 with respect to datum "A".
Dimensions in mm
0.196
0.189
0.008
0.004
-A-
8° MAX
0° MIN
0.034
0.016
0.009
0.007
Package Style: SOIC-8
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