4-247
4
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
!
SiGe HBT
Si CMOS
8
7
6
5
RF IN
GND1
GND2
IPSET
1
2
3
4
RF OUT
ISET
VCC
ENABLE
Bias Circuits
RF2451
3V LOW NOISE AMPLIFIER
• GSM Handsets
• CDMA Handsets
• TDMA Handsets
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Oscillator Loop Amplifiers
The RF2451 is a general purpose, low-cost, high perfor-
mance low noise amplifier designed for operation from a
2.7V to 4V supply with low current consumption. The
attenuation of the device is controlled when in power
down mode, providing a known gain step. The RF2451 is
available in a small industry-standard MSOP-8 surface
mount package, enabling compact designs which con-
serve board space. The design features accurate PTAT
(Proportional To Absolute Temperature) biasing scheme
using band gap cells.
• 700MHz to 2000MHz Operation
• 2.7V to 3.6V Single Supply
• +5dBm Input IP3 at 3.0mA
• 12dB Gain at 1950MHz
• 1.8dB Noise Figure at 1950MHz
• 17dB Gain Step
RF2451
3V Low Noise Amplifier
RF2451 PCBA
Fully Assembled Evaluation Board
4
Rev A8 000822
.026
.120
.116
10°MAX
0°MIN
.009
.005
.120
.116
.196
.190
1
.016
.010
.036
.032
.006
.002
.027
.017
Package Style: MSOP-8
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