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KC73125MP Datasheet(PDF) 4 Page - Samsung semiconductor |
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KC73125MP Datasheet(HTML) 4 Page - Samsung semiconductor |
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4 / 18 page ![]() 1/3 INCH CCD IMAGE SENSOR FOR EIA CAMERA KC73125MP 4 DC CHARACTERISTICS CLOCK VOLTAGE CONDITIONS Table 3. DC Characteristics Item Symbol Min. Typ. Max. Unit Remark Output stage drain bias VDD 14.55 15.0 15.45 V Output stage gate voltage VGG 1.75 2.0 2.25 V Output stage source voltage VSS Ground through 680 Ω V ±5% Substrate voltage adjustment range VSUB 7.0 14.5 V Fluctuation voltage range after substrate voltage adjusted ∆V SUB -3 3 % Reset gate voltage adjustment range VRGL 0.0 2.0 V Protection circuit bias voltage VL VVL voltage of the vertical clock waveform Output stage drain current IDD 2.5 mA Table 4. Clock Voltage Conditions Item Symbol Min. Typ. Max. Unit Remark Read-out clock voltage VVT 14.55 15.0 15.45 V High level Vertical transfer clock voltage VVH1 ~ VVH4 -0.05 0.0 0.05 V VVH = (VVH1 + VVH2)/2 VVL1 ~ VVL4 -9.5 -9.0 -8.5 V VVL = (VVL3 + VVL4)/2 Horizontal transfer clock voltage VΦH 4.75 5.0 5.25 V High VHL -0.05 0.0 0.05 V Low Charge reset clock voltage VΦRG 4.75 5.0 5.25 V High VRGLH - VRGLL 0.8 V Low Substrate clock voltage VΦSUB 20.0 23.0 25.0 V Shutter |
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