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2SJ413 Datasheet(PDF) 3 Page - Sanyo Semicon Device |
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2SJ413 Datasheet(HTML) 3 Page - Sanyo Semicon Device |
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3 / 4 page ![]() 2SJ413 No.5366–3/4 ID=-50A IDP=- 200A SW Time - I D A S O P D - Ta VDD=-30V VGS=-10V 2 3 2 3 5 7 2 3 5 7 23 5 7 23 5 7 2 3 5 7 2 3 5 7 2 3 5 7 23 5 7 23 5 7 72 3 5 7 100 10 1000 10000 -100 -10 -1.0 -0.1 -10 -1.0 -100 -1.0 -10 -100 20 60 40 80 120 100 140 160 0 0 2 1 3 4 P D - Tc 20 60 40 80 120 100 140 160 0 0 40 20 60 80 70 100 R DS(on) - Tc Ciss,Coss,Crss - VDS f=1MHz 2 3 5 7 2 3 5 7 2 3 5 7 20 10 0 40 35 30 020 -20 -40 -60 40 60 80 100 120 160 140 50 5 25 15 45 1000 100 10000 100000 -10 -5 -15 -20 -25 -30 0 100 µ s ID= -25A,V GS =-4V I D= -25A,V GS =-10V Operation in this area is limited by RDS(on). Ciss Coss Crss 10ms 1ms 10 µs 100ms td(on) tr td(off) tf DC operation Drain-to-Source Voltage, VDS –V Drain Current, ID –A Drain-to-Source Voltage, VDS –V Ambient Temperature, Ta – ˚C Tc=25 °C Single pulse Case Temperature, Tc – ˚C Case Temperature, Tc – ˚C |
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