BAT54CV_2

© NXP B.V. 2010. All rights reserved.

Objective data sheet

Rev. 02 — 15 January 2010

3 of 9

NXP Semiconductors

BAT54CV

Two Schottky barrier double diodes in ultra small SOT666 package

[1]

Refer to SOT666 standard mounting conditions.

6.

Thermal characteristics

[1]

Refer to SOT666 standard mounting conditions.

[2]

Reflow soldering is the only recommended soldering method.

7.

Characteristics

[1]

Per device

total power dissipation

[1] -440

mW

Table 5.

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to ambient

in free air

[1][2] --

225

K/W

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

forward voltage

see Figure 1;

[1]

-

-

240

mV

-

-

320

mV

-

-

400

mV

-

-

500

mV

-

-

800

mV

reverse current

--

2

μA

diode capacitance

see Figure 3

--

10

pF