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STB270N4F3 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STB270N4F3
Description  N-channel 40 V, 1.6 mΩ, 160 A, D2PAK, I2PAK STripFET™III Power MOSFET
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB270N4F3 Datasheet(HTML) 5 Page - STMicroelectronics

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STB270N4F3, STI270N4F3
Electrical characteristics
Doc ID 13208 Rev 4
5/14
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
D²PAK
-
160
A
I²PAK
-
120
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
(pulsed)
D²PAK
-
640
A
I²PAK
-
480
A
VSD
(2)
2.
Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward on voltage
ISD=80 A, VGS=0
-1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=160 A,
di/dt = 100 A/µs,
VDD=32 V, Tj=150 °C
(see Figure 15)
-
70
225
3.2
ns
nC
A



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