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BFP720F Datasheet(PDF) 9 Page - Infineon Technologies AG

Part # BFP720F
Description  C Heterojunction Wideband RF Bipolar Transistor
PDF  26 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP720F Datasheet(HTML) 9 Page - Infineon Technologies AG

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BFP720F
Product Brief
Data Sheet
9
Revision 1.0, 2009-03-13
Table 2
Quick Reference AC Characteristics at
T
A = 25°C
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Transition frequency
f
T
–45
–
GHz
V
CE =3 V, IC =13mA,
f =1GHz
f = 2.4 GHz
Maximum Power Gain
Low Noise Operation Point
High Linearity Operation Point
G
ms
G
ms
–
22
25.5
–dB
I
C =5mA
I
C =13mA
Transducer Gain
Low Noise Operation Point
High Linearity Operation Point
S
21
S
21
–
20.5
23
–dB
Z
S = ZL =50 Ω
I
C =5mA
I
C =13mA
Minimum Noise Figure
Minimum Noise Figure
Associated Gain
NF
min
G
ass
–
0.55
22
–dB
Z
S = Zopt
I
C =5mA
I
C =5mA
Linearity
1 dB Gain Compression Point
3rd Order Intercept Point
OP
1dB
OIP
3
–
6
21
–dBm
Z
S = ZL =50 Ω
I
C =13mA
I
C =13mA
f =5.5 GHz
Maximum Power Gain
Low Noise Operation Point
High Linearity Operation Point
G
ms
G
ms
–
19
21.5
–dB
I
C =5mA
I
C =13mA
Transducer Gain
Low Noise Operation Point
High Linearity Operation Point
S
21
S
21
–
15
16.5
–dB
Z
S = ZL =50 Ω
I
C =5mA
I
C =13mA
Minimum Noise Figure
Minimum Noise Figure
Associated Gain
NF
min
G
ass
–
0.7
15
–dB
Z
S = Zopt
I
C =5mA
I
C =5mA
Linearity
1 dB Gain Compression Point
3rd Order Intercept Point
OP
1dB
OIP
3
–
7
21
–dBm
Z
S = ZL =50 Ω
I
C =13mA
I
C =13mA



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